{"id":410,"date":"2021-12-07T15:34:32","date_gmt":"2021-12-07T06:34:32","guid":{"rendered":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=410"},"modified":"2021-12-07T16:24:49","modified_gmt":"2021-12-07T07:24:49","slug":"%e5%ad%a6%e4%bc%9a%e7%99%ba%e8%a1%a8%e3%80%902018%e5%b9%b4%e5%ba%a6%e3%80%91","status":"publish","type":"page","link":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=410","title":{"rendered":"\u5b66\u4f1a\u767a\u8868\u30102018\u5e74\u5ea6\u3011"},"content":{"rendered":"\n

\u30102018\u5e74\u5ea6\u3011<\/strong><\/span><\/p>\n\n\n\n

\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Na-Ga-Si\u4e09\u5143\u7cfb\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u7d50\u6676\u69cb\u9020\u304a\u3088\u3073\u96fb\u5b50\u72b6\u614b\u89e3\u6790<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/21<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u96fb\u6a5f\u5927\u5b66\u3001\u6771\u4eac\u90fd\u8db3\u7acb\u533a<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>A {112}\u03a33 boundary grown from the decomposition of a \u03a39 boundary during directional solidification of multicrystalline silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/21<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u96fb\u6a5f\u5927\u5b66\u3001\u6771\u4eac\u90fd\u8db3\u7acb\u533a<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5fd7\u8cc0\u656c\u6b21,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>GaSb\u306e\u4e00\u65b9\u5411\u51dd\u56fa\u904e\u7a0b\u306b\u304a\u3051\u308b\u30c7\u30f3\u30c9\u30e9\u30a4\u30c8\u6210\u9577\u306e\u305d\u306e\u5834\u89b3\u5bdf<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/21<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u96fb\u6a5f\u5927\u5b66\u3001\u6771\u4eac\u90fd\u8db3\u7acb\u533a<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u4e8c\u898b\u822a\u5e73,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Sn\u30d5\u30e9\u30c3\u30af\u30b9\u306b\u3088\u308bNa-Si\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u7d50\u6676\u6210\u9577\u5236\u5fa1<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/21<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u96fb\u6a5f\u5927\u5b66\u3001\u6771\u4eac\u90fd\u8db3\u7acb\u533a<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Morphological transformation of melt crystal Si interface including twin boundaries<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u96fb\u6a5f\u5927\u5b66\u3001\u6771\u4eac\u90fd\u8db3\u7acb\u533a<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>In situ observation of interaction between grain boundaries during directional solidification of Si<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>3rd German Polish Conference on Crystal Growth (GPCCG3)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/3\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Poznan University of Technology, Pozna\u0144,Poland<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Formation mechanism of twin boundary and fabrication of periodically-twinned structure in borate crystal<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>International Symposium on Modeling of Crystal Growth Processes and Devices(MCGPD-2019)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/2\/28<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>SSN College of Engineering, Kalavakkam,India<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Influence of grain boundary dislocations on the direction of a small-angle grain boundary in multicrystalline silicon during directional solidification<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>International Symposium & School on Crystal Growth Fundamentals 2018\uff08ISSCGF-2018\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/5<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u79cb\u6e6f\u6e29\u6cc9\u4f50\u52d8\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Na-Si-Ga\u4e09\u5143\u7cfb\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u5358\u7d50\u6676\u80b2\u6210<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u30db\u30a6\u9178\u5869\u7d50\u6676\u6210\u9577\u306b\u304a\u3051\u308b\u5305\u6709\u7269\u306e\u5f62\u6210\u904e\u7a0b<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Initiation and development of small-angle grain boundaries during directional solidification of multicrystalline silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u6cb3\u91ce\u512a\u4eba,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u4e00\u65b9\u5411\u6210\u9577\u904e\u7a0b\u306b\u304a\u3051\u308bGaSb\u56fa\u6db2\u754c\u9762\u306e\u305d\u306e\u5834\u89b3\u5bdf<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u4e8c\u898b\u822a\u5e73,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Na-Si\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u7d50\u6676\u6210\u9577\u306b\u304a\u3051\u308bSn\u30d5\u30e9\u30c3\u30af\u30b9\u306e\u52b9\u679c<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Grain boundary development during directional solidification of mc-Si<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u65b0\u6d25\u967d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u7d14\u9285\u306e\u878d\u70b9\u306b\u304a\u3051\u308b\u7c92\u754c\u30a8\u30cd\u30eb\u30ae\u30fc\u306e\u6e2c\u5b9a<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5409\u6fa4\u62d3\u54c9,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>BiSb\u306b\u304a\u3051\u308b\u56fa\u6db2\u754c\u9762\u4e0d\u5b89\u5b9a\u5316\u306e\u305d\u306e\u5834\u89b3\u5bdf<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c47\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-47\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/11\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u4ed9\u53f0\u5e02\u6226\u707d\u5fa9\u8208\u8a18\u5ff5\u9928\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Sn\u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305fNa-Ga-Si\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u5358\u7d50\u6676\u80b2\u6210<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2018\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/9\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2018\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/9\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Moving direction of grain boundary during directional solidification of mc-Si<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2018\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/9\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>BILLAU Leo,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Influence of temperature gradient on solid-melt interface perturbation for pure antimony<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2018\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/9\/20<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u5317\u5927\u5b66\u5ddd\u5185\u5317\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Crystal growth of Na-Si clathrates by evaporation of Na from the Na-Si-Sn solution<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>THERMEC'2018<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/7\/11<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Cit\u00e9 des Sciences et de l'Industrie, Paris,France<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Single crystal growth of silicon clathrate<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>10th\u3000International\u3000Workshop on Crystalline Silicon for Solar Cells\uff08CSSC-10\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2018\/4\/11<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u5317\u5927\u5b66\u91d1\u5c5e\u6750\u6599\u7814\u7a76\u6240\u3001\u5bae\u57ce\u770c\u4ed9\u53f0\u5e02<\/td><\/tr><\/tbody><\/table><\/figure>\n","protected":false},"excerpt":{"rendered":"

\u30102018\u5e74\u5ea6\u3011 \u767a\u8868\u8005 \u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u4e00\u822c\uff09> \u6a19\u984c Na-Ga-Si\u4e09\u5143\u7cfb\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u7d50\u6676\u69cb\u9020\u304a\u3088\u3073\u96fb\u5b50\u72b6\u614b\u89e3\u6790 \u5b66\u4f1a\u540d \u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u6625\u671f(\u7b2c164\u56de)\u8b1b\u6f14\u5927\u4f1a \u767a\u8868\u5e74\u6708\u65e5 […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":228,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"ngg_post_thumbnail":0,"_lightning_design_setting":{"layout":"default"},"footnotes":""},"class_list":["post-410","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/410","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=410"}],"version-history":[{"count":5,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/410\/revisions"}],"predecessor-version":[{"id":455,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/410\/revisions\/455"}],"up":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/228"}],"wp:attachment":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=410"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}