{"id":408,"date":"2021-12-07T15:34:12","date_gmt":"2021-12-07T06:34:12","guid":{"rendered":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=408"},"modified":"2021-12-07T16:25:08","modified_gmt":"2021-12-07T07:25:08","slug":"%e5%ad%a6%e4%bc%9a%e7%99%ba%e8%a1%a8%e3%80%902019%e5%b9%b4%e5%ba%a6%e3%80%91","status":"publish","type":"page","link":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=408","title":{"rendered":"\u5b66\u4f1a\u767a\u8868\u30102019\u5e74\u5ea6\u3011"},"content":{"rendered":"\n

\u30102019\u5e74\u5ea6\u3011<\/strong><\/span><\/p>\n\n\n\n

\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d(\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Splitting of small-angle grain boundaries during directional solidification of silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2020\u5e74\u6625\u671f(\u7b2c166\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2020\/3\/19\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5fd7\u8cc0\u656c\u6b21,  <\u53e3\u982d(\u4e00\u822c)><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u53cc\u6676\u306e\u5f62\u6210\u304cGaSb\u306e{111}\u30d5\u30a1\u30bb\u30c3\u30c8\u9762\u306e\u6210\u9577\u901f\u5ea6\u306b\u53ca\u307c\u3059\u5f71\u97ff<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2020\u5e74\u6625\u671f(\u7b2c166\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2020\/3\/19\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d(\u4e00\u822c)><\/span><\/td><\/tr>
\u6a19\u984c<\/td>In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2020\u5e74\u6625\u671f(\u7b2c166\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2020\/3\/19\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d(\u4e00\u822c)><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u7d14Si\u878d\u6db2\u6210\u9577\u306b\u304a\u3051\u308b\u30bb\u30eb\u69cb\u9020\u306e\u5f62\u6210\u904e\u7a0b<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2020\u5e74\u6625\u671f(\u7b2c166\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2020\/3\/19\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d(\u516c\u52df\u30b7\u30f3\u30dd\u30b8\u30a6\u30e0)><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Na8(Ga\/Si)46\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u30b2\u30b9\u30c8\u539f\u5b50\u7f6e\u63db<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2020\u5e74\u6625\u671f(\u7b2c166\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2020\/3\/18\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u6771\u4eac\u5de5\u696d\u5927\u5b66\u3000\u5927\u5ca1\u5c71\u30ad\u30e3\u30f3\u30d1\u30b9\u3010\u4e2d\u6b62\u3011<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u85e4\u539f\u822a\u4e09,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>In Situ Observation of Melt Growth Processes of Silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>2019Materials Research Society Fall Meeting & Exhibit\uff082019MRS-Fall\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/12\/4<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Hynes Convention Center\uff08\u30dc\u30b9\u30c8\u30f3\u3001\u30a2\u30e1\u30ea\u30ab\uff09<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u91d1\u5c5e\u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305f\u30b7\u30ea\u30b3\u30f3\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u7d50\u6676\u6210\u9577<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/11\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u56db\u30db\u30a6\u9178\u30ea\u30c1\u30a6\u30e0\u306e\u53cc\u6676\u754c\u9762\u5f62\u6210\u904e\u7a0b\u306e\u76f4\u63a5\u89b3\u5bdf<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/10\/31<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5409\u6fa4\u62d3\u54c9,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u7d14Sb\u306e\u878d\u6db2\u6210\u9577\u306b\u304a\u3051\u308b\u7d50\u6676\u2013\u878d\u6db2\u754c\u9762\u306e\u4e0d\u5b89\u5b9a\u5316\u306b\u304a\u3088\u307c\u3059\u6210\u9577\u65b9\u4f4d\u306e\u5f71\u97ff<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/10\/31<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5fd7\u8cc0\u656c\u6b21,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>GaSb\u306e\u878d\u6db2\u6210\u9577\u904e\u7a0b\u306b\u304a\u3051\u308b\u6210\u9577\u901f\u5ea6\u306b\u53ca\u307c\u3059(111)\u6975\u6027\u306e\u5f71\u97ff<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/10\/30<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Unsteady growth of grain boundary groove during solidification of multicrystalline silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/10\/30<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Instability at grain boundary included crystal\/melt interface during Si solidification<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u7b2c48\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-48\uff09<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/10\/30<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5927\u962a\u5927\u5b66\u9280\u674f\u4f1a\u9928\u3001 \u5927\u962a\u5e9c\u5439\u7530\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u68ee\u6238\u6625\u5f66,  <\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>\u30ca\u30c8\u30ea\u30a6\u30e0\u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305f\u30b7\u30ea\u30b3\u30f3\u7d50\u6676\u306e\u30ca\u30ce\u30fb\u30de\u30a4\u30af\u30ed\u9020\u5f62<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u79cb\u671f(\u7b2c165\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/9\/12<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5ca1\u5c71\u5927\u5b66\u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5ca1\u5c71\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5fd7\u8cc0\u656c\u6b21,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>GaSb\u306e\u30c7\u30f3\u30c9\u30e9\u30a4\u30c8\u6210\u9577\u901f\u5ea6\u3068\u53cc\u6676\u754c\u9762\u9593\u9694\u306e\u95a2\u4fc2<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u79cb\u671f(\u7b2c165\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/9\/12<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5ca1\u5c71\u5927\u5b66\u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5ca1\u5c71\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>On the growth behavior of the grooves at grain\/grain\/melt triple phase boundary during solidification of multicrystalline silicon<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u79cb\u671f(\u7b2c165\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/9\/12<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5ca1\u5c71\u5927\u5b66\u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5ca1\u5c71\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>The effect of grain boundaries on instability at the crystal\/melt interface during the unidirectional growth of Si<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u79cb\u671f(\u7b2c165\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/9\/12<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5ca1\u5c71\u5927\u5b66\u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5ca1\u5c71\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u98ef\u5cf6\u7a70,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>Na-Sn\u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305ftype-\u2161\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u5316\u5408\u7269Na16Ba8Si136\u306e\u5358\u7d50\u6676\u80b2\u6210<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2019\u5e74\u79cb\u671f(\u7b2c165\u56de)\u8b1b\u6f14\u5927\u4f1a<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/9\/12<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>\u5ca1\u5c71\u5927\u5b66\u6d25\u5cf6\u30ad\u30e3\u30f3\u30d1\u30b9\u3001\u5ca1\u5c71\u5e02<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u5fd7\u8cc0\u656c\u6b21,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>IN SITU OBSERVATION OF DENDRITE GROWTH IN GALLIUM ANTIMONIDE<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/8\/2<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Keystone Resort and Conference Center, Colorado, U.S.A<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u524d\u7530\u5065\u4f5c,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>TWIN BOUNDARY FORMATION DEPENDING ON CRYSTAL\/LIQUID INTERFACE MORPHOLOGY IN LITHIUM TETRABORATE<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/8\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Keystone Resort and Conference Center, Colorado, U.S.A<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u80e1\u5bdb\u4f83,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>THE EFFECT OF GRAIN BOUNDARIES ON INSTABILITY AT THE CRYSTALMELT INTERFACE DURING THE UNIDIRECTIONAL GROWTH OF SI<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/8\/1<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Keystone Resort and Conference Center, Colorado, U.S.A<\/td><\/tr>
 <\/td> <\/td><\/tr>
\u767a\u8868\u8005<\/span><\/td>\u8358\u5c65\u4e2d,  <\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td><\/tr>
\u6a19\u984c<\/td>GRAIN BOUNDARY EVOLUTIONS AND INTERACTIONS AT THE CRYSTAL\/MELT INTERFACE OF SILICON DURING DIRECTIONAL SOLIDIFICATION<\/td><\/tr>
\u5b66\u4f1a\u540d<\/td>19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)<\/td><\/tr>
\u767a\u8868\u5e74\u6708\u65e5<\/td>2019\/7\/30<\/td><\/tr>
\u767a\u8868\u5834\u6240<\/td>Keystone Resort and Conference Center, Colorado, U.S.A<\/td><\/tr><\/tbody><\/table><\/figure>\n","protected":false},"excerpt":{"rendered":"

\u30102019\u5e74\u5ea6\u3011 \u767a\u8868\u8005 \u8358\u5c65\u4e2d,  <\u53e3\u982d(\u4e00\u822c\uff09> \u6a19\u984c Splitting of small-angle grain boundaries during directional solidif […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":228,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"ngg_post_thumbnail":0,"_lightning_design_setting":{"layout":"default"},"footnotes":""},"class_list":["post-408","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/408","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=408"}],"version-history":[{"count":6,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/408\/revisions"}],"predecessor-version":[{"id":456,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/408\/revisions\/456"}],"up":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/228"}],"wp:attachment":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=408"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}