{"id":1805,"date":"2022-05-11T16:11:59","date_gmt":"2022-05-11T07:11:59","guid":{"rendered":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=1805"},"modified":"2023-09-08T10:39:10","modified_gmt":"2023-09-08T01:39:10","slug":"%e5%ad%a6%e4%bc%9a%e7%99%ba%e8%a1%a8%e3%80%902022%e5%b9%b4%e5%ba%a6%e3%80%91","status":"publish","type":"page","link":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/?page_id=1805","title":{"rendered":"\u5b66\u4f1a\u767a\u8868\u30102022\u5e74\u5ea6\u3011"},"content":{"rendered":"\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
2022\u5e74\u5ea6\u3000\u3000\u3000\u3000\u3000<\/span><\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u68ee\u6238\u6625\u5f66\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nNa \u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305f\u65b0\u898f Si \u7d50\u6676\u80b2\u6210\u6cd5\u306e\u958b\u767a<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2023\u5e74\u6625\u671f\u8b1b\u6f14\u5927\u4f1a<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/8<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u6771\u4eac\u5927\u5b66\u3001\u76ee\u9ed2\u533a<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u85e4\u539f\u822a\u4e09\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nInstability of crystal\/melt interface of Si and Si1-xGex<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n3rd International Symporium on \"Modeling of Crystal Growth Processes and Devices\" (MCGPD-2023)<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/6<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nSSN Institutions \u3001\u30c1\u30a7\u30f3\u30ca\u30a4\uff08\u30a4\u30f3\u30c9\uff09<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u91ce\u6fa4\u7d14\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nPolymorph transition-mediated non-classical nucleation and growth in the colloidal heteroepitaxial growth<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n3rd International Symporium on \"Modeling of Crystal Growth Processes and Devices\" (MCGPD-2023)<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/6<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nSSN Institutions \u3001\u30c1\u30a7\u30f3\u30ca\u30a4\uff08\u30a4\u30f3\u30c9\uff09<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u85e4\u539f\u822a\u4e09\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nIn-situ observation of crystal\/melt interface morphology during directional solidification of semicondustor materials<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n5th International Workshop on Advanced Functional Nanomaterials (IWAN-5, 2023)<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/3<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nAnna\u5927\u5b66\u3001\u30c1\u30a7\u30f3\u30ca\u30a4\uff08\u30a4\u30f3\u30c9\uff09<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u91ce\u6fa4\u7d14\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nGrowth of colloidal crystals by heteroepitaxy<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n5th International Workshop on Advanced Functional Nanomaterials (IWAN-5, 2023)<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/3<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nAnna\u5927\u5b66\u3001\u30c1\u30a7\u30f3\u30ca\u30a4\uff08\u30a4\u30f3\u30c9\uff09<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\nMishra Shashank Shekhar\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nInterface kinetics at {100},{110} and {111} silicon planes during melt-growth process<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n5th International Workshop on Advanced Functional Nanomaterials (IWAN-5, 2023)<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2023\/3\/3<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nAnna\u5927\u5b66\u3001\u30c1\u30a7\u30f3\u30ca\u30a4\uff08\u30a4\u30f3\u30c9\uff09<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\nChuang Lu-Chung\uff08\u8358\u5c65\u4e2d\uff09\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nDislocation generation from small-angle grain boundaries during directional solidification of multicrystalline silicon<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\nThe 33rd International Photovoltaic Science and Engineering Conference\uff08PVSEC-33\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/11\/16<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834\u3001\u540d\u53e4\u5c4b\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\nMishra Shashank Shekhar\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nExperimental measurement of growth velocity anisotropy along {100}., {110} and {111} planes of silicon during melt growth process<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\nThe 33rd International Photovoltaic Science and Engineering Conference\uff08PVSEC-33\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/11\/16<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834\u3001\u540d\u53e4\u5c4b\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u68ee\u6238\u6625\u5f66\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nDevelopment of novel crystal growth method for silicon calathrate<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\nThe 33rd International Photovoltaic Science and Engineering Conference\uff08PVSEC-33\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/11\/15<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u540d\u53e4\u5c4b\u56fd\u969b\u4f1a\u8b70\u5834\u3001\u540d\u53e4\u5c4b\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u91ce\u6fa4\u7d14\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\n\u30b3\u30ed\u30a4\u30c9\u30d8\u30c6\u30ed\u30a8\u30d4\u30bf\u30ad\u30b7\u30e3\u30eb\u6210\u9577\u306b\u304a\u3051\u308b\u591a\u5f62\u5f62\u6210\u3068\u591a\u5f62\u8ee2\u79fb<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u7b2c51\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-51\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/11\/2<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nRCC\u6587\u5316\u30bb\u30f3\u30bf\u30fc\u3001\u5e83\u5cf6\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u68ee\u6238\u6625\u5f66\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nNa-Sn\u30d5\u30e9\u30c3\u30af\u30b9\u65b9\u3092\u7528\u3044\u305fNa,Ba\u5185\u5305\u578bSi\u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u5358\u7d50\u6676\u80b2\u6210<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u7b2c51\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-51\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/11\/1<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nRCC\u6587\u5316\u30bb\u30f3\u30bf\u30fc\u3001\u5e83\u5cf6\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u524d\u7530\u5065\u4f5c\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nFe-Si\u7cfb\u5171\u6676\u306e\u4e00\u65b9\u5411\u6210\u9577\u904e\u7a0b\u306e\u76f4\u63a5\u89b3\u5bdf<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u7b2c51\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-51\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/10\/31<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nRCC\u6587\u5316\u30bb\u30f3\u30bf\u30fc\u3001\u5e83\u5cf6\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u8358\u5c65\u4e2d\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nIn situ observation of solidification and subsequent evolution of Ni-Si eutectics<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u7b2c51\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-51\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/10\/31<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nRCC\u6587\u5316\u30bb\u30f3\u30bf\u30fc\u3001\u5e83\u5cf6\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\nMishra Shashank Shekhar\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nGrowth behavior at {100} and {110} crystal\/melt interfaces during directional solidification of Si<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u7b2c51\u56de\u7d50\u6676\u6210\u9577\u56fd\u5185\u4f1a\u8b70\uff08JCCG-51\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/10\/31<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nRCC\u6587\u5316\u30bb\u30f3\u30bf\u30fc\u3001\u5e83\u5cf6\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u85e4\u539f\u822a\u4e09\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nIn-situ observations of crystal growth behaviors of silicon during solidification<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n2022 international conferences on the science and technology of devices and materials\uff08SSDM2022\uff09<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/9\/27<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u5e55\u5f35\u30e1\u30c3\u30bb\u3001\u5343\u8449\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u524d\u7530\u5065\u4f5c\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nFe-Si \u7cfb\u5171\u6676\u306e\u4e00\u65b9\u5411\u51dd\u56fa\u904e\u7a0b\u306e\u76f4\u63a5\u89b3\u5bdf<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2022\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/9\/23<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u798f\u5ca1\u5de5\u696d\u5927\u5b66\u3001\u798f\u5ca1\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u8358\u5c65\u4e2d\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nSmall-angle grain boundaries as sources of generation and absorption of dislocations during directional solidification of multicrystalline silicon<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2022\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/9\/23<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u798f\u5ca1\u5de5\u696d\u5927\u5b66\u3001\u798f\u5ca1\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u694a\u51e1\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nGrain boundary interaction in directional solidification of multi-crystalline silicon<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2022\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/9\/23<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u798f\u5ca1\u5de5\u696d\u5927\u5b66\u3001\u798f\u5ca1\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u68ee\u6238\u6625\u5f66\u3001<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\n\u71b1\u5206\u89e3\u6cd5\u306b\u3088\u308bNa-Si \u30af\u30e9\u30b9\u30ec\u30fc\u30c8\u306e\u751f\u6210\u6761\u4ef6\u306e\u691c\u8a0e<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n\u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2022\u5e74\u79cb\u671f\u8b1b\u6f14\u5927\u4f1a<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/9\/22<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u798f\u5ca1\u5de5\u696d\u5927\u5b66\u3001\u798f\u5ca1\u5e02<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u91ce\u6fa4\u7d14\uff0c<\u53e3\u982d(\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\n\u30b3\u30ed\u30a4\u30c9\u7d50\u6676\u306e\u30d8\u30c6\u30ed\u30a8\u30d4\u30bf\u30ad\u30b7\u30e3\u30eb\u6210\u9577\u30e1\u30ab\u30cb\u30ba\u30e0<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\nJapan Geoscience Union Meeting 2022<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/5\/22<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\nHybrid (in person & online)<\/td>\n<\/tr>\n
 <\/td>\n <\/td>\n<\/tr>\n
\u767a\u8868\u8005<\/span><\/td>\n\u8358\u5c65\u4e2d\uff0c<\u53e3\u982d\uff08\u4e00\u822c\uff09><\/span><\/td>\n<\/tr>\n
\u6a19\u984c<\/td>\nDecomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon<\/td>\n<\/tr>\n
\u5b66\u4f1a\u540d<\/td>\n11TH INTERNATIONAL WORKSHOP ON CRYSTALLINE SILICON FOR SOLAR CELLS<\/td>\n<\/tr>\n
\u767a\u8868\u5e74\u6708\u65e5<\/td>\n2022\/4\/21<\/td>\n<\/tr>\n
\u767a\u8868\u5834\u6240<\/td>\n\u30aa\u30f3\u30e9\u30a4\u30f3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n
<\/figure>\n
<\/figure>\n","protected":false},"excerpt":{"rendered":"

2022\u5e74\u5ea6\u3000\u3000\u3000\u3000\u3000   \u767a\u8868\u8005 \u68ee\u6238\u6625\u5f66\u3001<\u53e3\u982d\uff08\u62db\u5f85\uff09> \u6a19\u984c Na \u30d5\u30e9\u30c3\u30af\u30b9\u3092\u7528\u3044\u305f\u65b0\u898f Si \u7d50\u6676\u80b2\u6210\u6cd5\u306e\u958b\u767a \u5b66\u4f1a\u540d \u65e5\u672c\u91d1\u5c5e\u5b66\u4f1a2023\u5e74\u6625\u671f\u8b1b\u6f14\u5927\u4f1a \u767a\u8868\u5e74\u6708\u65e5 2023\/3\/8 […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":228,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"ngg_post_thumbnail":0,"_lightning_design_setting":{"layout":"default"},"footnotes":""},"class_list":["post-1805","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1805","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1805"}],"version-history":[{"count":22,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1805\/revisions"}],"predecessor-version":[{"id":2377,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/1805\/revisions\/2377"}],"up":[{"embeddable":true,"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=\/wp\/v2\/pages\/228"}],"wp:attachment":[{"href":"https:\/\/www.xtalphys.imr.tohoku.ac.jp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1805"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}